


Teh Stork wrote:I've sat all weekend with IR2110 model and IRFB3077 mosfets - trying to get some real world simulations in multisim on them. I need to run the simulations to determine capacitance needed, appropriate gate resistors and similar. This proves very difficult tho, grounding and not grounding (and the fact that simulations are based on a grounded point) is a wee bit much for my tiny experience with the program.
What capacitance values are you going for between Vb-Vs, Vdd-Vss and Vcc-COM?
From your previous schematic, you run the normal isolated supply to lower bridge, and bootstrap to higher bridge yes?
- Stork



rhitee05 wrote:A bootstrap high-side supply is basically a charge pump, except it uses the FETs as the switching element rather than a separate switching circuit. It's simple, very effective, and widely used. I have no idea why Arlo hates it so much... All you need is a diode and one or a couple of capacitors. There are certain edge cases where bootstrapping fails, but if you think about it carefully that scenario is almost impossible to encounter in a BLDC application. There are many, many app notes and other documents which describe how to do bootstrapping correctly and how to choose the components.

Teh Stork wrote:Clever - I'll probably roll the same design
Couldn't one use a cheap charge pump (200mA, 3-22V) to isolate the 12V? This one is about 1 dollar on mouser.
Edit: After some thinking, I should add; I'm planning to run logic supply voltage at 3,3V - the same as the microcontroller I plan on running. Then I can directly run pwm from microcontroller to driver. Separate hi-side voltage must be added. (look at figure 12B in ir2110 datasheet, my uC max out voltage is 3,3V - but this will be well over the threshold for "1" logic).

rhitee05 wrote:A bootstrap high-side supply is basically a charge pump, except it uses the FETs as the switching element rather than a separate switching circuit. It's simple, very effective, and widely used. I have no idea why Arlo hates it so much... All you need is a diode and one or a couple of capacitors. There are certain edge cases where bootstrapping fails, but if you think about it carefully that scenario is almost impossible to encounter in a BLDC application. There are many, many app notes and other documents which describe how to do bootstrapping correctly and how to choose the components.


Arlo1 wrote:Teh Stork wrote:Clever - I'll probably roll the same design
Couldn't one use a cheap charge pump (200mA, 3-22V) to isolate the 12V? This one is about 1 dollar on mouser.
Edit: After some thinking, I should add; I'm planning to run logic supply voltage at 3,3V - the same as the microcontroller I plan on running. Then I can directly run pwm from microcontroller to driver. Separate hi-side voltage must be added. (look at figure 12B in ir2110 datasheet, my uC max out voltage is 3,3V - but this will be well over the threshold for "1" logic).
A quick look at your charge pump and its only good to 10v so no. (although if you only run 10 or less to everything then maybe)
But who runs everything at 10 or less?? I looked at running 9 volt to the gates with a smaller resister and I am not sure if its a good idea.... It would get me just past the miller plateau but im not sure if its a good idea. Still thinking about it.
Yes you need to run 5 v to vdd on the IR2110 and IR2113 drivers.
I will redo my schematic in the first post so its easier to read soon.

Arlo1 wrote:Simpler then what I have???
Isolated power to the hi side is about the simplest you can get isnt it?
I Choose this layout because I figure its the best...
I dont have to wait for the bootstrap caps to charge ever, I have less components to install and test, my cost is a bit more in parts but when im buisy I save money becasuse my time is worth more then those parts!
bearing wrote:The reason why people have had troubles with bootstrap circuits is probably because of the choice of capacitor (and/or diode). You can't use an electrolytic IMO. They have too high ESR (and possibly also ESL). I would choose a SMD ceramic. The actual gate driver IC would of course also need a ceramic.
The problem I see with using a generic ("black box") isolated DC/DC is that you don't know how fast dV/dt between secondary and primary it can handle.





chbaird wrote:1: Drive V(g-s) to -5v to properly turn the SiC MOSFET off in a reasonable time.
chbaird wrote:2: 9 amps of gate drive current
chbaird wrote:3: Matched propagation delays for high and low side
chbaird wrote:4: Safety!! (0.1" isolation barrier between LV and HV sides of the board)
chbaird wrote:Arlo, there's nothing wrong with the way you're doing it. Everyone else, if you think he's doing it all wrong, build one and prove that your way is better.


Teh Stork wrote:Sharing this: IRS2334
We're already using ~12ohms of total resistance to limit current into gate. I see IR2110's being used at 8A peak, being rated at 2A. Can these be used to satisfy our switching speeds?
Edit: to the poster below me, why oh why didn't you use film capacitors instead of that huge electrolytic? This paper is a very good read up on capacitor sizing and parameters to look at for different applications.

Arlo1 wrote:I just figured once I have a good DC/DC isolated supply. I dont need to know much about it so me being the end user it IS simplier.
I got the idea from two people Luke who I am not sure has a working power stage... And Guru Shane Colton! So I figured when I need to do a -5volt pull down to turn off the IGBTs I have it will also come in handy...




Harold in CR wrote:Looks to me like YOU were doing the singing.![]()
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I'm totally impressed with your project. Just wish I understood what you are doing.![]()
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